TK31J60W5,S1VQ

new-10%

Manufacturer part number:TK31J60W5,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 30.8A TO-3P(N)

Case Package:SOT-23

Datasheet:TK31J60W5,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Capacitance	3nF
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	230W Tc
Element Configuration	Single
Power Dissipation	230W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C	30.8A Ta
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Rise Time	32ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	165 ns
Continuous Drain Current (ID)	30.8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	3nF
FET Feature	Super Junction
Drain to Source Resistance	73mOhm
Rds On Max	88 mΩ
RoHS Status	RoHS Compliant