TK10Q60W,S1VQ

new-10%

Manufacturer part number:TK10Q60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A

Case Package:SOT-23

Datasheet:TK10Q60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Supplier Device Package	I-PAK
Weight	3.949996g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	80W Tc
Element Configuration	Single
Turn On Delay Time	45 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 300V
Current - Continuous Drain (Id) @ 25°C	9.7A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	22ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	9.7A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	700pF
Drain to Source Resistance	327mOhm
Rds On Max	430 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant