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APT10078BLLG

APT10078BLLG

APT10078BLLG

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 780m Ω @ 7A, 10V ±30V 2525pF @ 25V 95nC @ 10V 1000V TO-247-3

SOT-23

APT10078BLLG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Factory Lead Time 31 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 14A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 403W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 403W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 780m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.78Ohm
Pulsed Drain Current-Max (IDM) 56A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $21.97000 $21.97
10 $20.32300 $203.23
100 $17.35690 $1735.69
500 $15.37956 $7689.78
APT10078BLLG Product Details

APT10078BLLG Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2525pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

APT10078BLLG Features


a continuous drain current (ID) of 14A
the turn-off delay time is 30 ns
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)


APT10078BLLG Applications


There are a lot of Microsemi Corporation
APT10078BLLG applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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