TK35E08N1,S1X

new-10%

Manufacturer part number:TK35E08N1,S1X

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 80V 55A TO-220

Case Package:SOT-23

Datasheet:TK35E08N1,S1X Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	72W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12.2m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	55A
RoHS Status	RoHS Compliant