BSC883N03MSGATMA1

new-10%

Manufacturer part number:BSC883N03MSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 19A 8-Pin TDSON EP

Case Package:SOT-23

Datasheet:BSC883N03MSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 57W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 15V
Current - Continuous Drain (Id) @ 25°C	19A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	7.6ns
Drain to Source Voltage (Vdss)	34V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0046Ohm
Pulsed Drain Current-Max (IDM)	392A
DS Breakdown Voltage-Min	34V
Avalanche Energy Rating (Eas)	40 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant