FQH44N10-F133

new-10%

Manufacturer part number:FQH44N10-F133

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 48A TO-247

Case Package:SOT-23

Datasheet:FQH44N10-F133 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	QFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	48A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	48A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.039Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	192A
Avalanche Energy Rating (Eas)	530 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant