BSM100GP60BOSA1 Description

BSM100GP60BOSA1 is a single IGBT with a Collector Emitter Breakdown Voltage of 600V from Infineon Technologies. BSM100GP60BOSA1 operates between -40°C~125°C TJ, and its Current - Collector (Ic) (Max) is 135A. The BSM100GP60BOSA1 has 3 pins and it is available in Module packaging way. BSM100GP60BOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.

BSM100GP60BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A

• Current - Collector (Ic) (Max): 135A

• Current - Collector Cutoff (Max): 500μA

• Input Capacitance (Cies) @ Vce: 4.3nF @ 25V

• Transistor Application: POWER CONTROL

BSM100GP60BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial