IRG5K100HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5K100HF12A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
620W
Configuration
Half Bridge
Power - Max
620W
Input
Standard
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
200A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
12.9nF
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 100A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
12.9nF @ 25V
RoHS Status
RoHS Compliant
IRG5K100HF12A Product Details
IRG5K100HF12A Description
IRG5K100HF12A is a 1200v IGBT Half-bridge. The transistor IRG5K100HF12A can be applied in Industrial Motor Drive, Uninterruptible Power Supply, Welding and Cutting Machine, Switched Mode Power Supply, Induction Heating, and AC Inverter Drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IRG5K100HF12A is in the POWIR 34? package with 620W Power dissipation.