BSM10GD120DN2E3224BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM10GD120DN2E3224BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
JESD-30 Code
R-XUFM-X17
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
80W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
400μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
15A
Turn On Time
105 ns
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 10A
Turn Off Time-Nom (toff)
460 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
530pF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$589.303200
$589.3032
10
$555.946415
$5559.46415
100
$524.477750
$52447.775
500
$494.790330
$247395.165
1000
$466.783330
$466783.33
BSM10GD120DN2E3224BOSA1 Product Details
BSM10GD120DN2E3224BOSA1 Description
BSM10GD120DN2E3224BOSA1 is a 1200v IGBT Power Module. The BSM10GD120DN2E3224BOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Industrial, Grid infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM10GD120DN2E3224BOSA1 is in the tray package with 80W Power dissipation.