MID550-12A4

new-10%

Manufacturer part number:MID550-12A4

Manufacturer:IXYS

Description:MOD IGBT RBSOA 1200V 670A Y3-DCB

Case Package:SOT-23

Datasheet:MID550-12A4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Y3-DCB
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.75kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MID
Pin Count	7
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Turn On Delay Time	100 ns
Power - Max	2750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	600 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	670A
Current - Collector Cutoff (Max)	21mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.3V
Input Capacitance	26nF
Turn On Time	160 ns
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 400A
Turn Off Time-Nom (toff)	690 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	26nF @ 25V
VCEsat-Max	2.8 V
Height	30mm
Length	110mm
Width	62mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free