BSM150GB120DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM150GB120DLCHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
1250W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
300A
Turn On Time
190 ns
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 150A
Turn Off Time-Nom (toff)
650 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$121.830330
$121.83033
10
$114.934274
$1149.34274
100
$108.428560
$10842.856
500
$102.291094
$51145.547
1000
$96.501032
$96501.032
BSM150GB120DLCHOSA1 Product Details
BSM150GB120DLCHOSA1 Description
BSM150GB120DLCHOSA1 IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.