BSM150GB170DLCE3256HDLA1

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Manufacturer part number:BSM150GB170DLCE3256HDLA1

Manufacturer:Infineon Technologies

Description:BSM150GB170DLCE3256HDLA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSM150GB170DLCE3256HDLA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~125°C
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Configuration	Half Bridge
Power - Max	1250W
Input	Standard
Current - Collector Cutoff (Max)	300μA
Voltage - Collector Emitter Breakdown (Max)	1700V
Current - Collector (Ic) (Max)	300A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 150A
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	10nF @ 25V

Quantity	Unit Price	Ext. Price
1	$120.656441	$120.656441
10	$113.826831	$1138.26831
100	$107.383803	$10738.3803
500	$101.305474	$50652.737
1000	$95.571202	$95571.202

BSM150GB170DLCE3256HDLA1 Description

BSM150GB170DLCE3256HDLA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM150GB170DLCE3256HDLA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

BSM150GB170DLCE3256HDLA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

BSM150GB170DLCE3256HDLA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display