BSM150GD60DLC datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM150GD60DLC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
21
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
39
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
39
JESD-30 Code
R-XUFM-X39
Number of Elements
6
Configuration
Single
Power Dissipation
570W
Case Connection
ISOLATED
Power - Max
570W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
180A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
155 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 150A
Turn Off Time-Nom (toff)
260 ns
IGBT Type
NPT
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
6.5nF @ 25V
VCEsat-Max
2.45 V
RoHS Status
RoHS Compliant
BSM150GD60DLC Product Details
BSM150GD60DLC Description
BSM150GD60DLC is an N-channel IGBT Module transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of BSM150GD60DLC is 150°C TJ and its maximum power dissipation is 570W. BSM150GD60DLC has 39 pins and it is available in Module packaging way. The Turn On-Time of BSM150GD60DLC is 155 ns and Turn Off Time is 260 ns.