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BSM150GD60DLC

BSM150GD60DLC

BSM150GD60DLC

Infineon Technologies

BSM150GD60DLC datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM150GD60DLC Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 21
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 39
JESD-30 Code R-XUFM-X39
Number of Elements 6
Configuration Single
Power Dissipation 570W
Case Connection ISOLATED
Power - Max 570W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 180A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Turn On Time 155 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 150A
Turn Off Time-Nom (toff) 260 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
VCEsat-Max 2.45 V
RoHS Status RoHS Compliant
BSM150GD60DLC Product Details

BSM150GD60DLC Description


BSM150GD60DLC is an N-channel IGBT Module transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of BSM150GD60DLC is 150°C TJ and its maximum power dissipation is 570W. BSM150GD60DLC has 39 pins and it is available in  Module packaging way. The Turn On-Time of BSM150GD60DLC is 155 ns and Turn Off Time is 260 ns.



BSM150GD60DLC Features


  • Transistor Element Material: SILICON

  • IGBT Type: NPT

  • Polarity/Channel Type: N-CHANNEL

  • Mounting Type: Chassis Mount



BSM150GD60DLC Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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