BSM200GA120DLCSHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM200GA120DLCSHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
1450W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
370A
Turn On Time
190 ns
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 200A
Turn Off Time-Nom (toff)
650 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$121.29900
$1212.99
BSM200GA120DLCSHOSA1 Product Details
BSM200GA120DLCSHOSA1 Description
BSM200GA120DLCSHOSA1 is a type of IGBT module developed by Infineon Technologies. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.