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MIXA225PF1200TSF

MIXA225PF1200TSF

MIXA225PF1200TSF

IXYS

IGBT Modules XPT IGBT Module

SOT-23

MIXA225PF1200TSF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.1kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1100W
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 360A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 225A
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3 $106.30333 $318.90999

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