BSM200GA120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM200GA120DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
1998
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
1550W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
4mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
300A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 200A
Turn Off Time-Nom (toff)
630 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$127.45800
$1274.58
BSM200GA120DN2HOSA1 Product Details
BSM200GA120DN2HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.