MIXA100W1200TEH

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Manufacturer part number:MIXA100W1200TEH

Manufacturer:IXYS

Description:IGBT MODULE 1200V 155A 500W E3

Case Package:SOT-23

Datasheet:MIXA100W1200TEH Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	35
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	500W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-XUFM-X35
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	500W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	155A
Current - Collector Cutoff (Max)	300μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	110 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free