BSM25GD120DN2E3224BOSA1 Description

BSM25GD120DN2E3224BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. BSM25GD120DN2E3224BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 35A. The BSM25GD120DN2E3224BOSA1 has 3 pins and it is available in Module packaging way. BSM25GD120DN2E3224BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

BSM25GD120DN2E3224BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A

• Current - Collector (Ic) (Max): 35A

• Current - Collector Cutoff (Max): 800μA

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Input Capacitance (Cies) @ Vce: 1.65nF @ 25V

BSM25GD120DN2E3224BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial