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FF150R12YT3BOMA1

FF150R12YT3BOMA1

FF150R12YT3BOMA1

Infineon Technologies

FF150R12YT3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF150R12YT3BOMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 24
ECCN Code EAR99
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 24
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 625W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 330 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Turn Off Time-Nom (toff) 610 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 10.5nF @ 25V
Height 17mm
Length 55.9mm
Width 45.6mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
20 $47.19400 $943.88
FF150R12YT3BOMA1 Product Details

FF150R12YT3BOMA1 Description


FF150R12YT3BOMA1 is a 1200v IGBT-module. The transistor FF150R12YT3BOMA1 can be applied in  Communications equipment, Wireless Infrastructure, Industrial, Lighting, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP20R06KL4BOMA1 is in the tray package with 625W Power dissipations.



FF150R12YT3BOMA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C : 200A

Repetitive peak collector current Tp = 1 ms: 300A

Total power dissipation Tc = 25°C: 625W

Gate-emitter peak voltage: ±20V



FF150R12YT3BOMA1 Applications


Communications equipment 

Wireless infrastructure 

Industrial 

Lighting 

Enterprise systems 

Datacenter & enterprise computing


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