FF150R12YT3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF150R12YT3BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
PCB, Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
24
ECCN Code
EAR99
Max Power Dissipation
625W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
24
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
625W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
200A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
330 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
610 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
10.5nF @ 25V
Height
17mm
Length
55.9mm
Width
45.6mm
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
20
$47.19400
$943.88
FF150R12YT3BOMA1 Product Details
FF150R12YT3BOMA1 Description
FF150R12YT3BOMA1 is a 1200v IGBT-module. The transistor FF150R12YT3BOMA1 can be applied in Communications equipment, Wireless Infrastructure, Industrial, Lighting, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP20R06KL4BOMA1 is in the tray package with 625W Power dissipations.