BSM300GA120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM300GA120DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
4
JESD-30 Code
R-XUFM-X4
Number of Elements
1
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
2500W
Transistor Application
GENERAL PURPOSE SWITCHING
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5.6mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
430A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 300A
Turn Off Time-Nom (toff)
680 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
22nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$154.20800
$1542.08
BSM300GA120DN2HOSA1 Product Details
BSM300GA120DN2HOSA1 Description
The BSM300GA120DN2HOSA1 is an IGBT Power Module. Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch. Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.
BSM300GA120DN2HOSA1 Features
Single switch
Including fast free-wheeling diodes
Package with insulated metal base plate
BSM300GA120DN2HOSA1 Applications
As a switch
Switch electrical power on and off extremely fast and with high energy efficiency