FF600R12IS4FBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF600R12IS4FBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Case Connection
ISOLATED
Power - Max
3700W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
600A
Power Dissipation-Max (Abs)
3700W
Turn On Time
270 ns
Vce(on) (Max) @ Vge, Ic
3.75V @ 15V, 600A
Turn Off Time-Nom (toff)
630 ns
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
39nF @ 25V
VCEsat-Max
3.75 V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$416.00000
$416
500
$411.84
$205920
1000
$407.68
$407680
1500
$403.52
$605280
2000
$399.36
$798720
2500
$395.2
$988000
FF600R12IS4FBOSA1 Product Details
FF600R12IS4FBOSA1 Description
The FF600R12IS4FBOSA1 is an EconoDUAL? 3 1200 V, 600 A dual IGBT module with TRENCHSTOP? IGBT4, Emitter Controlled diode and NTC. A switch, such as an IGBT power module, can be used to quickly and efficiently turn on and off electrical power. Due to its capacity to improve switching, temperature, weight, and cost performance, the IGBT power module is quickly replacing other devices in high-power applications.