APTGT100TL170G

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Manufacturer part number:APTGT100TL170G

Manufacturer:Microsemi Corporation

Description:PWR MOD IGBT 3LEVEL INVERTER SP6

Case Package:SOT-23

Datasheet:APTGT100TL170G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	12
Operating Temperature	-40°C~150°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	560W
Number of Elements	1
Configuration	Three Level Inverter
Power - Max	560W
Input	Standard
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	150A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	9nF
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 100A
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	9nF @ 25V
RoHS Status	RoHS Compliant