BSM35GD120DN2

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Manufacturer part number:BSM35GD120DN2

Manufacturer:Infineon Technologies

Description:BSM35GD120DN2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSM35GD120DN2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	17
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	17
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	280W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	17
Number of Elements	6
Configuration	Three Phase Inverter
Power Dissipation	280W
Case Connection	ISOLATED
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	120 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 35A
Turn Off Time-Nom (toff)	450 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2nF @ 25V
VCEsat-Max	3.2 V
Height	17mm
Length	107.5mm
Width	45.5mm
RoHS Status	RoHS Compliant