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BSM100GB170DN2HOSA1

  • BSM100GB170DN2HOSA1
  • BSM100GB170DN2HOSA1

BSM100GB170DN2HOSA1

BSM100GB170DN2HOSA1

Infineon Technologies

BSM100GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM100GB170DN2HOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1kW
Configuration Half Bridge
Power - Max 1000W
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 145A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 145A
Input Capacitance 16nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 16nF @ 25V
RoHS Status RoHS Compliant
BSM100GB170DN2HOSA1 Product Details

BSM100GB170DN2HOSA1 Description


BSM100GB170DN2HOSA1 is a type of IGBT module developed by Infineon Technologies. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



BSM100GB170DN2HOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



BSM100GB170DN2HOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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