VS-GB300TH120N

new-10%

Manufacturer part number:VS-GB300TH120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:Trans IGBT Module N-CH 1.2KV 500A

Case Package:SOT-23

Datasheet:VS-GB300TH120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Number of Pins	7
Operating Temperature	150°C TJ
Published	2015
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.645kW
Number of Elements	1
Configuration	Half Bridge
Element Configuration	Dual
Power - Max	1645W
Input	Standard
Collector Emitter Voltage (VCEO)	2.45V
Max Collector Current	500A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	21.2nF
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 300A
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	21.2nF @ 25V
RoHS Status	ROHS3 Compliant