BSM50GD120DN2BOSA1 Description

BSM50GD120DN2BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. BSM50GD120DN2BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1000A. The BSM50GD120DN2BOSA1 has 17 pins and it is available in Module packaging way. BSM50GD120DN2BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

BSM50GD120DN2BOSA1 Features

• Input Capacitance (Cies) @ Vce: 3.3nF @ 25V

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Current - Collector Cutoff (Max): 1mA

• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A

• Max Collector Current: 72A

BSM50GD120DN2BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial