BSM50GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM50GD120DN2BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Screw, Through Hole
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
17
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
2007
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Max Power Dissipation
350W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
Number of Elements
6
Configuration
Full Bridge
Power Dissipation
350W
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
72A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.5V
Turn On Time
100 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 50A
Turn Off Time-Nom (toff)
450 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
3.3nF @ 25V
Height
17mm
Length
107.5mm
Width
45mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$128.00000
$1280
BSM50GD120DN2BOSA1 Product Details
BSM50GD120DN2BOSA1 Description
BSM50GD120DN2BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. BSM50GD120DN2BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1000A. The BSM50GD120DN2BOSA1 has 17 pins and it is available in Module packaging way. BSM50GD120DN2BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
BSM50GD120DN2BOSA1 Features
Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
Voltage - Collector Emitter Breakdown (Max): 1200V