APTGT200DA60TG

new-10%

Manufacturer part number:APTGT200DA60TG

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 290A 625W SP4

Case Package:SOT-23

Datasheet:APTGT200DA60TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	625W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X12
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	625W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	290A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	12.3nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 200A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	12.3nF @ 25V
RoHS Status	RoHS Compliant