MUBW50-12E8

new-10%

Manufacturer part number:MUBW50-12E8

Manufacturer:IXYS

Description:IGBT MODULE 1200V 90A 350W E3

Case Package:SOT-23

Datasheet:MUBW50-12E8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Box
Published	2003
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	35
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MUBW
Pin Count	35
Qualification Status	Not Qualified
Number of Elements	7
Configuration	Three Phase Inverter with Brake
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	90A
Current - Collector Cutoff (Max)	800μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Reverse Voltage	1.6kV
Input Capacitance	3.8nF
Turn On Time	130 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Turn Off Time-Nom (toff)	710 ns
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.8nF @ 25V
RoHS Status	RoHS Compliant