BSM50GD120DN2E3226BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM50GD120DN2E3226BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Three Phase Inverter
Power - Max
350W
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 50A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
3.3nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$128.00000
$1280
BSM50GD120DN2E3226BOSA1 Product Details
BSM50GD120DN2E3226BOSA1 Description
BSM50GD120DN2E3226BOSA1 is a 1200v IGBT Power Module. The BSM50GD120DN2E3226BOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wireless infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM50GD120DN2E3226BOSA1 is in the ECONOPACK 2K package with 350W Power dissipation.