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BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

Infineon Technologies

BSM50GD120DN2E3226BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM50GD120DN2E3226BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature 150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Three Phase Inverter
Power - Max 350W
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 50A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $128.00000 $1280
BSM50GD120DN2E3226BOSA1 Product Details

BSM50GD120DN2E3226BOSA1 Description


BSM50GD120DN2E3226BOSA1 is a 1200v IGBT Power Module. The BSM50GD120DN2E3226BOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wireless infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM50GD120DN2E3226BOSA1 is in the ECONOPACK 2K package with 350W Power dissipation.



BSM50GD120DN2E3226BOSA1 Features


Power module

3-phase full-bridge

Including fast free-wheel diodes

Package with insulated metal base plate



BSM50GD120DN2E3226BOSA1 Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment 

Wireless infrastructure 

Enterprise systems 

Enterprise projectors


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