BSM75GB120DN2HOSA1                              Description

This application specific IGBT utilizes the most advanced Power MESH? technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

BSM75GB120DN2HOSA1                             Features

? Designed for automotive applications and

AEC-Q101 qualified

? Low threshold voltage

? Low on-voltage drop

? High voltage clamping feature

? Logic level gate charge

? ESD gate-emitter protection

? Gate and gate-emitter integrated resistors

BSM75GB120DN2HOSA1                             Application

? Automotive ignition