BSM15GD120DLCE3224BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM15GD120DLCE3224BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
JESD-30 Code
R-XUFM-X17
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
145W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
76μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Turn On Time
130 ns
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 15A
Turn Off Time-Nom (toff)
390 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
1nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$83.251380
$83.25138
10
$78.539038
$785.39038
100
$74.093432
$7409.3432
500
$69.899464
$34949.732
1000
$65.942890
$65942.89
BSM15GD120DLCE3224BOSA1 Product Details
BSM15GD120DLCE3224BOSA1 Description
BSM15GD120DLCE3224BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM15GD120DLCE3224BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.