BSM50GD60DLCBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM50GD60DLCBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
JESD-30 Code
R-XUFM-X17
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
250W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
70A
Turn On Time
52 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 50A
Turn Off Time-Nom (toff)
151 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
2.2nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$144.363562
$144.363562
10
$139.616597
$1396.16597
25
$138.646075
$3466.151875
50
$137.682299
$6884.11495
100
$134.850439
$13485.0439
500
$125.209322
$62604.661
BSM50GD60DLCBOSA1 Product Details
BSM50GD60DLCBOSA1 Description
The BSM50GD60DLCBOSA1 is an IGBT Power Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die.
The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.
Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch.
Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly being used as the preferred technology for high power applications.