BSM75GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM75GB170DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
34
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Published
1999
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Max Power Dissipation
625W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
625W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
3.9V
Max Collector Current
110A
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
11nF
Turn On Time
550 ns
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 75A
Turn Off Time-Nom (toff)
740 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$93.33000
$93.33
500
$92.3967
$46198.35
1000
$91.4634
$91463.4
1500
$90.5301
$135795.15
2000
$89.5968
$179193.6
2500
$88.6635
$221658.75
BSM75GB170DN2HOSA1 Product Details
BSM75GB170DN2HOSA1 Description
BSM75GB170DN2HOSA1 developed by Infineon Technologies is a type of IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.