BSP 52 E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BSP 52 E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BSP52
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Case Connection
COLLECTOR
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
1.5W
Turn Off Time-Max (toff)
1500ns
Turn On Time-Max (ton)
400ns
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.49000
$0.49
500
$0.4851
$242.55
1000
$0.4802
$480.2
1500
$0.4753
$712.95
2000
$0.4704
$940.8
2500
$0.4655
$1163.75
BSP 52 E6327 Product Details
BSP 52 E6327 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1mA, 1A.200MHz is present in the transition frequency.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BSP 52 E6327 Features
the DC current gain for this device is 2000 @ 500mA 10V the vce saturation(Max) is 1.8V @ 1mA, 1A a transition frequency of 200MHz
BSP 52 E6327 Applications
There are a lot of Infineon Technologies BSP 52 E6327 applications of single BJT transistors.