MMBT6429LT1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 100μA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.The device exhibits a collector-emitter breakdown at 45V.

MMBT6429LT1 Features

the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

MMBT6429LT1 Applications

There are a lot of Rochester Electronics, LLC MMBT6429LT1 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting