STB160NF3LLT4

new-10%

Manufacturer part number:STB160NF3LLT4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 160A D2PAK

Case Package:SOT-23

Datasheet:STB160NF3LLT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Packaging	Tape & Reel (TR)
Series	STripFET™ III
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	160A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB160N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 4.5V
Rise Time	350ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	640A
Avalanche Energy Rating (Eas)	1200 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free