BSP135H6327XTSA1

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BSP135H6327XTSA1

Manufacturer part number:BSP135H6327XTSA1

Manufacturer:Infineon Technologies

Description:BSP135H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSP135H6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Voltage	600V
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Current	12A
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	5.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id	1V @ 94μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	146pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120mA Ta
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 5V
Rise Time	5.6ns
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Fall Time (Typ)	182 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	120mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	600V
Recovery Time	130 ns
FET Feature	Depletion Mode
Height	1.5mm
Length	6.5mm
Width	3.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free