BSP149 E6327

new-10%

Manufacturer part number:BSP149 E6327

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 660MA SOT-223

Case Package:SOT-23

Datasheet:BSP149 E6327 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	SIPMOS®
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id	1V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	660mA Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.48A
Drain-source On Resistance-Max	3.5Ohm
Pulsed Drain Current-Max (IDM)	1.44A
DS Breakdown Voltage-Min	200V
FET Feature	Depletion Mode
RoHS Status	Non-RoHS Compliant