BSP171PH6327XTSA1

new-10%

BSP171PH6327XTSA1

Manufacturer part number:BSP171PH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSP171PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSP171PH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Voltage	60V
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Current	19A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	2V @ 460μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.9A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	87 ns
Turn-Off Delay Time	208 ns
Continuous Drain Current (ID)	1.45A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	0.3Ohm
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	-60V
Nominal Vgs	1.5 V
Feedback Cap-Max (Crss)	55 pF
Height	1.6mm
Length	6.5mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free