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BUK9Y15-100E,115

BUK9Y15-100E,115

BUK9Y15-100E,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14.7m Ω @ 20A, 10V ±10V 6139pF @ 25V 45.8nC @ 5V SC-100, SOT-669

SOT-23

BUK9Y15-100E,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 195W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6139pF @ 25V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 45.8nC @ 5V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 69A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.56067 $0.56067
3,000 $0.52329 $1.56987
7,500 $0.49713 $3.47991
10,500 $0.47844 $4.7844
BUK9Y15-100E,115 Product Details

BUK9Y15-100E,115 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6139pF @ 25V.This device conducts a continuous drain current (ID) of 69A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 21 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.With 100V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

BUK9Y15-100E,115 Features


a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns


BUK9Y15-100E,115 Applications


There are a lot of Nexperia USA Inc.
BUK9Y15-100E,115 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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