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FDMS86310

  • FDMS86310
  • FDMS86310

FDMS86310

FDMS86310

ON Semiconductor

FDMS86310 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS86310 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 40V
Current - Continuous Drain (Id) @ 25°C 17A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 80V
Height 1.05mm
Length 5.1mm
Width 5.85mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.05840 $3.1752
6,000 $1.02144 $6.12864
FDMS86310 Product Details

FDMS86310 Description

 

  This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.

 

FDMS86310 Features

 

Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A

Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant

 

FDMS86310 Applications

DC-DC Merchant Power Supply

 

 



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