BSP297 E6327

new-10%

Manufacturer part number:BSP297 E6327

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 660MA SOT-223

Case Package:SOT-23

Datasheet:BSP297 E6327 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	357pF @ 25V
Current - Continuous Drain (Id) @ 25°C	660mA Ta
Gate Charge (Qg) (Max) @ Vgs	16.1nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.66A
Pulsed Drain Current-Max (IDM)	2.64A
DS Breakdown Voltage-Min	200V
RoHS Status	Non-RoHS Compliant