STD2NK70Z-1

new-10%

Manufacturer part number:STD2NK70Z-1

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 700V 1.6A IPAK

Case Package:SOT-23

Datasheet:STD2NK70Z-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD2N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7 Ω @ 800mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.6A Tc
Gate Charge (Qg) (Max) @ Vgs	11.4nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	7Ohm
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	6.4A
Avalanche Energy Rating (Eas)	110 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant