STB5N62K3

new-10%

Manufacturer part number:STB5N62K3

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 620V 4.2A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:STB5N62K3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	1.6Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA LOW-ON RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STB5N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	680pF @ 50V
Current - Continuous Drain (Id) @ 25°C	4.2A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4.2A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	620V
Nominal Vgs	3.75 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free