BSP373L6327HTSA1

new-10%

Manufacturer part number:BSP373L6327HTSA1

Manufacturer:Infineon Technologies

Description:INFINEON - BSP373L6327HTSA1 - MOSFET Transistor, N Channel, 1.7 A, 100 V, 0.16 ohm, 10 V, 3 V

Case Package:SOT-23

Datasheet:BSP373L6327HTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1.7A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Reference Standard	AEC-Q101
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Voltage	100V
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.3Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	6.8A
Width	6.7mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free