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SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

Toshiba Semiconductor and Storage

MOSFET Vds=-20V Id=-1.8A 3Pin

SOT-23

SSM3J108TU(TE85L) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 800mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 158m Ω @ 800mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.055193 $0.055193
500 $0.040583 $20.2915
1000 $0.033820 $33.82
2000 $0.031027 $62.054
5000 $0.028997 $144.985
10000 $0.026974 $269.74
15000 $0.026087 $391.305
50000 $0.025652 $1282.6

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