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MD2009DFP

  • MD2009DFP
  • MD2009DFP

MD2009DFP

MD2009DFP

STMicroelectronics

MD2009DFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

MD2009DFP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature UL RECOGNIZED
Subcategory Other Transistors
Max Power Dissipation 40W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MD2009
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5.5A 5V
Current - Collector Cutoff (Max) 200μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.8V @ 1.4A, 5.5A
Collector Emitter Breakdown Voltage 700V
Emitter Base Voltage (VEBO) 7V
hFE Min 5
RoHS Status ROHS3 Compliant
Lead Free Lead Free
MD2009DFP Product Details

MD2009DFP Overview


This device has a DC current gain of 5 @ 5.5A 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 1.4A, 5.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.A maximum collector current of 10A volts can be achieved.

MD2009DFP Features


the DC current gain for this device is 5 @ 5.5A 5V
the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
the emitter base voltage is kept at 7V

MD2009DFP Applications


There are a lot of STMicroelectronics MD2009DFP applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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