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2SC4132T100Q

2SC4132T100Q

2SC4132T100Q

ROHM Semiconductor

2SC4132T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SC4132T100Q Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4132
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 80MHz
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 1.5A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.622428 $0.622428
10 $0.587196 $5.87196
100 $0.553959 $55.3959
500 $0.522603 $261.3015
1000 $0.493021 $493.021
2SC4132T100Q Product Details

2SC4132T100Q Overview


In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.A breakdown input voltage of 120V volts can be used.When collector current reaches its maximum, it can reach 2A volts.

2SC4132T100Q Features


the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz

2SC4132T100Q Applications


There are a lot of ROHM Semiconductor 2SC4132T100Q applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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