2SC4132T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SC4132T100Q Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
1.5A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4132
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 100mA, 1A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
80MHz
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Continuous Collector Current
1.5A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.622428
$0.622428
10
$0.587196
$5.87196
100
$0.553959
$55.3959
500
$0.522603
$261.3015
1000
$0.493021
$493.021
2SC4132T100Q Product Details
2SC4132T100Q Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.A breakdown input voltage of 120V volts can be used.When collector current reaches its maximum, it can reach 2A volts.
2SC4132T100Q Features
the DC current gain for this device is 120 @ 100mA 5V the vce saturation(Max) is 2V @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1.5A a transition frequency of 80MHz
2SC4132T100Q Applications
There are a lot of ROHM Semiconductor 2SC4132T100Q applications of single BJT transistors.