2SC4132T100Q Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.A breakdown input voltage of 120V volts can be used.When collector current reaches its maximum, it can reach 2A volts.
2SC4132T100Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SC4132T100Q Applications
There are a lot of ROHM Semiconductor 2SC4132T100Q applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
