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BSP613PL6327HUSA1

BSP613PL6327HUSA1

BSP613PL6327HUSA1

Infineon Technologies

Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

SOT-23

BSP613PL6327HUSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
Turn On Delay Time 6.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 875pF
Rds On Max 130 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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