BSR315PL6327HTSA1

new-10%

Manufacturer part number:BSR315PL6327HTSA1

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 60V 620MA SC-59

Case Package:SOT-23

Datasheet:BSR315PL6327HTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	SIPMOS®
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
HTS Code	8541.21.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	800m Ω @ 620mA, 10V
Vgs(th) (Max) @ Id	2V @ 160μA
Input Capacitance (Ciss) (Max) @ Vds	176pF @ 25V
Current - Continuous Drain (Id) @ 25°C	620mA Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	620mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.62A
Drain-source On Resistance-Max	0.8Ohm
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant